Home Products GaN 전력증폭기 GaN PA – RF 에너지 RIM151K0-20

RIM151K0-20

GaN PA – RF 에너지
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설명

RIM151K0-20 using GaN-on-SiC transistors is designed for industrial, scientific, medical (ISM) and plasma applications at 1500MHz. RIM151K0-20 is the world’s highest power and efficiency SSPA with affordable price. This amplifier is suitable for use in CW, ISM applications. This high efficiency rugged device is targeted to replace industrial magnetrons and other vacuum tubes which are currently applying into high power industrial applications, artificial diamond manufacturing, semiconductor equipments, and plasma systems.

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Datasheet
High Power Industry
Microwave CVD Reactor
Plasma Generator
Food Science
MW Heating and Drying

제품 사양

Min Freq.(MHz) 1496MHz
Max Freq.(MHz) 1502MHz
Output Power(W) 1000W
Power Gain(dB) 63dB
DC RF Efficiency(%) 61%
VDC(V) 50
Operating Mode CW/Pulse
RF Input Connector SMA, Female
RF Output Connector 7/16 DIN, Female
Cooling Water
Dimension(mm) 300(W) x 150(D) x 45(H)