통신
RFHIC의 질화갈륨 (GaN) 기술을 통해 차세대
무선통신 인프라 시장을 이끌고 있습니다.
무선통신 인프라 시장을 이끌고 있습니다.
4G LTE 인프라
RFHIC의 GaN-on-SiC 기술을 통해 4G LTE 기지국에
고효율, 고성능의 핵심 부품을 제공합니다.
4G LTE 인프라
최신 4G LTE 제품
ID18411D ›
RFHIC’s ID18411D is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 1800 to 1880 MHz....
ID19601D ›
RFHIC’s ID19601D is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 1930 to 1995 MHz....
ID19411D ›
RFHIC’s ID19411D is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 1995 to 2020 MHz....
ID26411D ›
RFHIC’s ID26411D is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 2570 to 2620 MHz....
