Home Products RF 트랜지스터 GaN 트랜지스터 – 통신 H006C11D

H006C11D

GaN 트랜지스터 – 통신
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설명

RFHIC’s H006C11D is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility transistor (HEMT) which operates from 1805 to 1880 MHz.The H006C11D delivers 220 W of saturated power at 48V and is designed to provide higher efficiency and linearity. The device is ideally suited for WiMAX, LTE, WCDMA and GSM systems.

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Datasheet
WiMAX, LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency Doherty Amplifier

제품 사양

Min Freq.(MHz) 1805MHz
Max Freq.(MHz) 1880MHz
Typ Output Power(W) 45W
Saturation Power(W) 220W
Power Gain(dB) 15.8dB
Efficiency 54%
VDC(V) 48
Package RF12001DHKR3
Package Type Flange

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