Home Products RF 트랜지스터 GaN 트랜지스터 – 통신 H012C12D

H012C12D

GaN 트랜지스터 – 통신
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설명

RFHIC’s H012C12D is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility transistor (HEMT) which operates from 758 to 821 MHz.The H012C12D delivers 440 W of saturated power at 48V and is designed to provide higher efficiency and linearity. The device is ideally suited for WiMAX, LTE, WCDMA and GSM systems.

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Datasheet
WiMAX, LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency Doherty Amplifier

제품 사양

Min Freq.(MHz) 758MHz
Max Freq.(MHz) 821MHz
Typ Output Power(W) 79W
Saturation Power(W) 440W
Power Gain(dB) 17.5dB
Efficiency 56%
VDC(V) 48
Package RF24010DKR3
Package Type Flange

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