Home Products RF 트랜지스터 GaN 트랜지스터 – 통신 ID19701D

ID19701D

GaN 트랜지스터 – 통신
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설명

RFHIC’s ID19701D is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 1930 to 1995 MHz.The ID19701D delivers 700 W of saturated power at 48V and is designed to provide higher efficiency and linearity. The device is internally matched and is ideally suited for 4G LTE systems.

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Datasheet
WiMAX, 4G LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency, Doherty Amplifier

제품 사양

Min Freq.(MHz) 1930MHz
Max Freq.(MHz) 1995MHz
Typ Output Power(W) 81.3W
Saturation Power(W) 692W
Power Gain(dB) 16.4dB
Efficiency 49%
VDC(V) 48
Package RF26009DKR3
Package Type Flange

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