Home Products RF 트랜지스터 GaN 트랜지스터 – 통신 ID18801D

ID18801D

GaN 트랜지스터 – 통신
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설명

RFHIC’s ID18801D is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 1805 to 1880 MHz.The ID18801D delivers 800 W of saturated power at 48V and is designed to provide higher efficiency and linearity. The device is internally matched and is ideally suited for 4G LTE systems.

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WiMAX, LET, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency, Doherty Amplifier

제품 사양

Min Freq.(MHz) 1805MHz
Max Freq.(MHz) 1880MHz
Typ Output Power(W) 107.2W
Saturation Power(W) 800W
Power Gain(dB) 16.4dB
Efficiency 54.8%
VDC(V) 48
Package RF26009DKKR3
Package Type Flange

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