RIM091K5-20

설명

RFHIC’s RIM091K5-20 is a 1.5kW, gallium nitride solid-state power amplifier (GaN SSPA) operable from 900-930 MHz. It has a drain efficiency of 63% and is capable of both CW and pulsed operations. The RIM091K5-20 is equipped with RFHIC’s gallium-nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistors (HEMT), providing higher efficiency, reliability, and linearity. To simplify system integration, the device is fully matched to 50-Ohms with integrated DC blocking capacitors on both RF ports. The RNP091K5-20 is ideal for microwave chemical vapor deposition (CVD) reactors, plasma generators, and microwave heating systems.