Home Products RF 트랜지스터 GaN 트랜지스터 – 통신 ID36541D

ID36541D

GaN 트랜지스터 – 통신
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설명

RFHIC’s ID36541D is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 3400 to 3800 MHz.The ID36541D delivers 540 W of saturated power at 48V and is designed to provide higher efficiency and linearity. The device is internally matched and is ideally suited for 5G NR systems.

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Datasheet
WiMAX, 5G NR, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency, Doherty Amplifier

제품 사양

Min Freq.(MHz) 3400MHz
Max Freq.(MHz) 3800MHz
Typ Output Power(W) 56.2W
Saturation Power(W) 540W
Power Gain(dB) 13.6dB
Efficiency 40%
VDC(V) 48
Package RF24009DKR3
Package Type Flange

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