RWP03160-10

설명

RFHIC’s RWP03160-10 is a gallium-nitride-on silicon carbide (GaN-on-SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 500 MHz, the RWP03160-10 yields a small signal gain of 43 dB with 54 dBm at OIP3. The RWP03160-10 is designed using RFHIC’s GaN-on-SiC high-electron-mobility transistors (HEMT), providing high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration.