통신
RFHIC의 질화갈륨 (GaN) 기술을 통해 차세대
무선통신 인프라 시장을 이끌고 있습니다.
무선통신 인프라 시장을 이끌고 있습니다.
RFHIC’s RWP1113500-57 is a 500 W, gallium-nitride (GaN) Wideband Power Amplifier designed for various defense applications. This gallium-nitride (GaN) wideband amplifier operates from 1,160 to 1,305 MHz and offers high reliability and ruggedness. The RWP1113500-57 is fabricated using RFHIC’s state-of-the-art gallium-nitride on silicon carbide (GaN-on-SiC) transistors, providing the industry’s best size, weight, and power (SWaP).
View Product Specification| Band | L-Band |
|---|---|
| Min Freq.(MHz) | 1160MHz |
| Max Freq.(MHz) | 1305MHz |
| Min Output Power | 450W |
| Typ Output Power(W) | 500W |
| Typ Output P1dB(dB) | 55dBm |
| Power Gain(dB) | 57dB |
| Efficiency | 50% |
| VDC(V) | 48 |
| Cooling | Forced Air |
| Dimension(mm) | 220 (W) x 31.1 (H) x 196 (D) |
| VSWR | 1.22 |