Home Products RF 트랜지스터 GaN 트랜지스터 – 통신 ID19801D

ID19801D

GaN 트랜지스터 – 통신
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설명

RFHIC’s ID19801D is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 1930 to 1995 MHz.The ID19801D delivers 800 W of saturated power at 48V and is designed to provide higher efficiency and linearity. The device is internally matched and is ideally suited for 4G LTE systems.

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Datasheet
WiMAX, 4G LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency, Doherty Amplifier

제품 사양

Min Freq.(MHz) 1930MHz
Max Freq.(MHz) 1995MHz
Typ Output Power(W) 107.2W
Saturation Power(W) 800W
Power Gain(dB) 15.5dB
VDC(V) 48
Package RF26009DKR3
Package Type Flange
Drain Efficiency(%) 53%

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