ID23461D

GaN 트랜지스터 – 통신
Production

설명

RFHIC’s ID23461D is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 2300 to 2400 MHz.The ID23461D delivers 460 W of saturated power at 48V and is designed to provide higher efficiency and linearity. The device is internally matched and is ideally suited for 4G LTE systems.

View Product Specification
WiMAX, 4G LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency, Doherty Amplifier

제품 사양

Min Freq.(MHz) 2300MHz
Max Freq.(MHz) 2400MHz
Typ Output Power(W) 56.2W
Saturation Power(W) 460W
Power Gain(dB) 16.2dB
Efficiency 56%
VDC(V) 48
Package RF24008DKR3
Package Type Flange