통신
RFHIC의 질화갈륨 (GaN) 기술을 통해 차세대
무선통신 인프라 시장을 이끌고 있습니다.
무선통신 인프라 시장을 이끌고 있습니다.
RFHIC’s ID22441D is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 2110 to 2170 MHz.The ID22441D delivers 407 W of saturated power at 48V and is designed to provide higher efficiency and linearity. The device is internally matched and is ideally suited for 4G LTE systems.
View Product Specification| Min Freq.(MHz) | 2110MHz |
|---|---|
| Max Freq.(MHz) | 2170MHz |
| Typ Output Power(W) | 53.7W |
| Saturation Power(W) | 407W |
| Power Gain(dB) | 17.4dB |
| Efficiency | 58% |
| VDC(V) | 48 |
| Package | RF24008DKR3 |
| Package Type | Flange |