통신
RFHIC의 질화갈륨 (GaN) 기술을 통해 차세대
무선통신 인프라 시장을 이끌고 있습니다.
무선통신 인프라 시장을 이끌고 있습니다.
The RCM251K6-20 is a 1.6 kW, GaN Solid-State Power Amplifier designed for high power industrial, scientific, and medical (ISM) applications. The solid-tate power amplifier is operable from 2400 to 2500 MHz and is built using RFHIC’s cutting edge gallium- nitride (GaN) on SiC HEMT providing excellent efficiency and breakdown voltage.
The GaN Solid state Power Amplifier (SSPA) is suitable for use in CW, pulse, and linear applications. This high efficiency rugged device is targeted to replace industrial magnetrons and other vacuum tubes currently powering industrial heating, drying, microwave CVD, semiconductor equipment and sintering.
View Product Specification| Min Freq.(MHz) | 2400MHz |
|---|---|
| Max Freq.(MHz) | 2500MHz |
| Output Power(W) | 1600W |
| Power Gain(dB) | 62dB |
| DC RF Efficiency(%) | 57% |
| VDC(V) | 50 |
| RF Input Connector | SMA Female |
| RF Output Connector | 7/16 DIN Female |
| Dimension(mm) | 200 x 361.5 x 53 |
| Weight | 7.6kg |