RNP21040-50

설명

RFHIC’s RNP21040-50 is a gallium-nitride on silicon carbide (GaN-on-SiC) narrow-band high-power amplifier suited for general-purpose RF applications. Covering from 2100 to 2170 MHz, the RNP21040-50 yields a small signal gain of 33 dB with 47.5 dBm at the P3dB peak. The RNP21040-50 is designed using RFHIC’s GaN-on-SiC high-electron-mobility transistors (HEMT) on aluminum sub-carriers, providing high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration.