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RFHIC Successfully Concludes Participation in InterBattery 2025
RFHIC, a global leader in GaN (Gallium Nitride) semiconductor technology, has successfully concluded its participation in InterBattery 2025, Korea’s largest secondary battery industry exhibition. At the event, RFHIC showcased its cutting-edge GaN semiconductor solutions, including high-efficiency power amplifiers (PAs) designed to enhance battery manufacturing and energy management processes.
InterBattery 2025 took place from March 5 to 7, 2025, at COEX in Seoul, bringing together industry leaders in battery and power semiconductor technologies. RFHIC exhibited its next-generation GaN-based high-power PA solutions at Booth #P415 in The Platz Hall, demonstrating how GaN technology can revolutionize battery production and energy efficiency.
GaN Power Amplifier Solutions for Battery Manufacturing
During the exhibition, RFHIC introduced various applications of its products, highlighting their potential use in key battery manufacturing processes such as:
*Compared to traditional silicon (Si)-based semiconductors, GaN semiconductors offer superior power efficiency, higher durability, and reduced energy consumption, making them a key innovation in the power semiconductor market.
Through InterBattery 2025, RFHIC successfully showcased the innovation of GaN RF energy solutions to the global market and strengthened its industry partnerships.
About RFHIC
RFHIC (KOSDAQ: A218410) is a global leader in GaN RF and microwave solutions, specializing in wireless communications, defense, aerospace, and industrial RF energy applications. The company develops and manufactures high-power GaN transistors, solid-state power amplifiers, and microwave generator systems, all produced in-house for superior quality and performance. RFHIC is committed to advancing next-generation power semiconductor technologies to create a more connected, energy-efficient, and innovative future. Learn more at www.rfhic.com.
RFHIC® is a registered trademark.
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