Transistors - RF Energy

RFHIC offers a broad portfolio of gallium nitride (GaN) on silicon carbide (SiC) discrete transistors designed for RF Energy applications – operable in 915MHz, 2.45GHz, 5.8GHz with power levels capable up to 1kw. 

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Displaying 11 of 11 products
Part NumberDatasheetStatusMin Freq. (MHz)Max Freq. (MHz)Output Power (W)Power Gain (dB)VDCPackage Type
ID24330WD Production2300250034713.548Flange
IE13550D Production1295130555014.950Flange
IE24100P Production2400250010014.850Flange
IE24150P Production2400250015013.350Flange
IE24200P Production2400250020013.850Flange
IE24300P Production2400250030012.350Flange
IE09150PC Production90093015017.650Flange
IE09300PC Production9009303001850Flange
ET43014P Production-60001415.550Flange
ET43028P Production-6000281650Flange
ET43055P Production-60005513.450Flange
Displaying 11 of 11 products