Transistors - RF Energy

RFHIC offers a broad portfolio of gallium nitride (GaN) on silicon carbide (SiC) discrete transistors designed for RF Energy applications – operable in 915MHz, 2.45GHz, 5.8GHz with power levels capable up to 1kw. 

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Part Number Datasheet Min Freq.(MHz)Max Freq.(MHz)Output Power(W)Power Gain(dB)Drain Efficiency(%)VDC(V)Package Type
D001CCNH 920010000707.84050Flange
IG63070P 58506650708.84040Flange
D025C8C 570059009012.55143Flange
IE24100P 2400250010014.87250Flange
IE24150P 2400250015013.373.350Flange
IE24200P 2400250020013.874.950Flange
IE24300P 2400250030012.371.250Flange
ID24330WD 2300250034713.547.248Flange
IE13550D 1295130555014.979.250Flange
IE09150PC 90093015017.683.150Flange
IE09300PC 9009303001880.250Flange
IE10550D 5001000550157550Flange
ET43014P -60001415.568.250Flange
ET43028P -6000281668.850Flange