Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
RFHIC offers a broad portfolio of gallium nitride (GaN) on silicon carbide (SiC) discrete transistors designed for RF Energy applications – operable in 915MHz, 2.45GHz, 5.8GHz with power levels capable up to 1kw.
Part Number | Datasheet | Status | Min Freq. (MHz) | Max Freq. (MHz) | Output Power (W) | Power Gain (dB) | VDC | Package Type |
ID24330WD | Production | 2300 | 2500 | 347 | 13.5 | 48 | Flange | |
IE13550D | Production | 1295 | 1305 | 550 | 14.9 | 50 | Flange | |
IE24100P | Production | 2400 | 2500 | 100 | 14.8 | 50 | Flange | |
IE24150P | Production | 2400 | 2500 | 150 | 13.3 | 50 | Flange | |
IE24200P | Production | 2400 | 2500 | 200 | 13.8 | 50 | Flange | |
IE24300P | Production | 2400 | 2500 | 300 | 12.3 | 50 | Flange | |
IE09150PC | Production | 900 | 930 | 150 | 17.6 | 50 | Flange | |
IE09300PC | Production | 900 | 930 | 300 | 18 | 50 | Flange | |
ET43014P | Production | - | 6000 | 14 | 15.5 | 50 | Flange | |
ET43028P | Production | - | 6000 | 28 | 16 | 50 | Flange | |
ET43055P | Production | - | 6000 | 55 | 13.4 | 50 | Flange |