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Transistors - Wireless Infrastructure

RFHIC offers a broad portfolio of gallium nitride (GaN) on silicon carbide (SiC) discrete transistors designed for Wireless Infrastructure applications – operable sub-6GHz ranges designed for 4G LTE and 5G macro base stations

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Part Number	Datasheet	Min Freq.(MHz)	Max Freq.(MHz)	Saturation Power(W)	Power Gain(dB)	Efficiency	VDC(V)	Package	Package Type	Typ Output Power(W)
ID49531D		4800	5000	468	13	-	48	RF24009DKR3	Flange	56.2
H024		4500	4950	28	14	43	48	DFN66726L-Q2	Surface Mount	5
ID46531D		4500	4600	500	13	-	48	RF24009DKR3	Flange	70.8
ID41461DR		3700	4100	468	14.3	50	48	RF24008DKR3	Flange	48
ID38411DR		3700	4000	400	14.4	-	48	RF24008DKR3	Flange	56.2
ID41411DR		3700	4100	410	14.2	46.1	48	RF24008DKR3	Flange	56.2
ID39084W		3700	4100	94.4	14.3	-	48	RF12002KR3	Flange	3
ID41501D		3700	4200	460	14	44	48	RF24009DKR3	Flange	56.2
ID37411D		3600	3800	410	14.4	-	48	RF24008DKR3	Flange	56.2
ID36541D		3400	3800	540	13.6	40	48	RF24009DKR3	Flange	56.2
H108C11A		3400	3600	174	14	44	48	RF12001DHKR3	Flange	26
H032C11A		3400	3600	288	10.2	44	48	RF24010DKR3	Flange	50
H031		3400	3800	56.2	14.2	46	48	DFN7010010L	Surface Mount	10
H019		3400	3800	15.8	18.2	14.5	48	DFN66726L-Q2	Surface Mount	0.8

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Transistors - Wireless Infrastructure