Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
RF Energy
GaN solid-state is the future of microwave heating and plasma generation. With its limitless potential, GaN solid-state will define the RF energy of tomorrow, and we will continue to be at the forefront of what's next.
Why GaN Solid-State
Benefits of RFHIC's GaN Solid-State
01.
Longer Lifetime
RFHIC’s GaN Solid-State generators are built with our cutting edge gallium-nitride (GaN) HEMTs providing average lifetimes of ~100,000 to 500,000 hours, (*Can vary depending on usage)
02.
Graceful Degradation
RFHIC’s GaN Solid-State generators are built with our fault redundant solid-state power amplifiers resulting in graceful degradation in case of amplifier failure. Magnetrons tend to completely shut down in case of system failure, resulting in high maintenance costs.
03.
Digital Controllability
RFHIC’s GaN Solid-State generators are built with our controllable software suite allowing users to control the power, frequency, phase, and signal source (CW/Pulse).
04.
Precise Frequency
Unlike outdated vacuum tubes that provide spurious signals, RFHIC's GaN solid-state technology provides precise and accurate signals resulting in stable and uniform heat distribution.