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H007C11B

Transistors - Wireless Infrastructure
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Description

H007C11B is a 220W, GaN-on-SiC RF transistor designed for broadband amplifier, cellular infrastructure, and test instrumentation applications. The H007C11B provides 220W saturated output power with 55% drain efficiency at 48V across 2000MHz to 2500MHz. Its internally pre-matched push-pull configuration enables high-power broadband performance and simplified amplifier implementation, making it suitable for 2-way private radio, broadband, cellular, test instrumentation, and CW amplifier applications.

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Datasheet
2-Way Private Radio
Broadband Amplifier
Cellular Infrastructure
Test Instrumentation
CW Amplifier

Specification

Min Freq.(MHz) 2000MHz
Max Freq.(MHz) 2500MHz
Saturation Power(W) 220W
Power Gain(dB) 15.0dB
Efficiency 55%
VDC(V) 48
Package RF12001DHKR3
Package Type Flange