Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
RFHIC’s RWP1516100-57 is a 100 W, gallium-nitride (GaN) Wideband Power Amplifier designed for various defense applications. This gallium-nitride (GaN) wideband amplifier operates from 1,550 to 1,610 MHz and offers high reliability and ruggedness. The RWP1516100-57 is fabricated using RFHIC’s state-of-the-art gallium-nitride on silicon carbide (GaN-on-SiC) transistors, providing the industry’s best size, weight, and power (SWaP).
View Product Specification| Band | L-Band |
|---|---|
| Min Freq.(MHz) | 1550MHz |
| Max Freq.(MHz) | 1610MHz |
| Typ Output Power(W) | 100W |
| Typ Output P1dB(dB) | 50dBm |
| Power Gain(dB) | 62dB |
| VDC(V) | 48 |
| Dimension(mm) | 220(W) x 31.1(H) x 196(D) |