Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
RFHIC’s RRP03250-10 is a 300 W gallium-nitride (GaN) module amplifier designed for radar systems applications. Operating from 135 to 460 MHz, the RRP03250-10 achieves 31 dB of gain with an efficiency of 45%. The RRP03250-10 utilizes our in-house gallium-nitride on silicon carbide (GaN-on-SiC) technology, resulting in higher breakdown voltage, wider bandwidth, and higher efficiency. Both RF ports have integrated DC-blocking capacitors and are fully matched to 50 Ohms. Customizable products are available upon request.
View Product Specification| Min Freq.(MHz) | 135MHz |
|---|---|
| Max Freq.(MHz) | 460MHz |
| Type | Module |
| Typ Output Power(W) | 300W |
| Power Gain(dB) | 31dB |
| PAE(%) | 40% |
| VDC(V) | 50 |