Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
RWP20050-10
Description
RFHIC’s RWP20050-10 is a gallium-nitride-on silicon carbide (GaN-on-SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 1000 to 3000 MHz, the RWP20050-10 yields a small signal gain of 38 dB with 47 dBm at Pin 9 dBm.The RWP20050-10 is designed using RFHIC’s GaN-on-SiC high-electron-mobility transistors (HEMT), providing high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration.
View Product Specification
Communication Systems
Laser Drive Amplifier
Radio Power Amplifier
Wideband Jammer
Specification
| Min Freq.(MHz) | 1000MHz |
|---|---|
| Max Freq.(MHz) | 3000MHz |
| Type | Pallet |
| Typ Output Power(W) | 50W |
| Power Gain(dB) | 37dB |
| VDC(V) | 32 |
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