Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
ET43055P
Description
RFHIC’s ET43055P is a 55W gallium-nitride on silicon carbide (GaN-on-SiC) drive transistor designed ideally for industrial, scientific, and medical (ISM) applications. Operable from DC to 6000 MHz, the ET43055P provides a gain of 13.4dB with a 75.2% drain efficiency at 50V. The device is capable of both continuous wave (CW) and pulse operations and can be customized upon request.
View Product Specification
Microwave Heating
Microwave Drying
Microwave Ablation
Microwave Plasma Generation
Microwave Lighting
Specification
| Max Freq.(MHz) | 6000MHz |
|---|---|
| Output Power(W) | 55W |
| Power Gain(dB) | 13.4dB |
| Drain Efficiency(%) | 72.6% |
| VDC(V) | 50 |
| Package Type | Flange |
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