Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
RWP0809300-55
Description
RFHIC’s RWP0809300-55 is a 300W, gallium-nitride (GaN) Wideband Power amplifier designed for microwave & RF heating and plasma generation applications. This gallium-nitride (GaN) wideband amplifier operates from 800 to 900 MHz and offers high reliability and ruggedness. The RWP0809300-55 is fabricated using RFHIC’s state-of-the-art gallium-nitride-on silicon carbide (GaN-on-SiC) transistors, providing the industry’s best size, weight, and power (SWaP).
View Product Specification
Microwave Heating
Microwave Drying
Microwave Plasma
RF Sub-Systems
Specification
| Min Freq.(MHz) | 800MHz |
|---|---|
| Max Freq.(MHz) | 900MHz |
| Typ Output Power(W) | 300W |
| Power Gain(dB) | 55dB |
| PAE(%) | 35% |
| VDC(V) | 45 |
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