Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
H012C12D
Description
RFHIC’s H012C12D is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility transistor (HEMT) which operates from 758 to 821 MHz.The H012C12D delivers 440 W of saturated power at 48V and is designed to provide higher efficiency and linearity. The device is ideally suited for WiMAX, LTE, WCDMA and GSM systems.
View Product Specification
WiMAX, LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency Doherty Amplifier
Specification
| Min Freq.(MHz) | 758MHz |
|---|---|
| Max Freq.(MHz) | 821MHz |
| Typ Output Power(W) | 79W |
| Saturation Power(W) | 440W |
| Power Gain(dB) | 17.5dB |
| Efficiency | 56% |
| VDC(V) | 48 |
| Package | RF24010DKR3 |
| Package Type | Flange |