Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
Ever since Percy Spencer first melted a chocolate bar in his shirt pocket in 1945, industrial microwave power’s primary source has not changed (until now). Our familiar tube-based friend, Magnetron, has been the sound power source for our industry for over half a century. It has served us well, figuratively and literally (think of all the late-night microwavable mac and cheese). But as technology advances, the stealthy Magnetron can no longer meet the demands required by this industry. It is time that we cross the chasm and adopt the technological advancements of the transistor.
What is Microwave Heating?
Before we jump into the magical possibilities of GaN solid-state technology, let us take a step back and understand what microwave heating is. Microwave heating is a Multiphysics phenomenon that involves electromagnetic waves and heat transfer; any material exposed to the electromagnetic field creates vibration and rotation of the polarized molecules inside the material. This friction between molecules increases the temperature of the material, thus heating it. Most materials like food, biological tissues, chemicals, and drugs have high-water content, allowing them to readily absorb microwave energy.
What are the advantages of GaN Solid State vs. Magnetrons?
Magnetron tubes have an approximate lifetime of only a few thousand hours, from 1,500 to 6,000 hours, depending on the tube and application. Due to their short lifetime, they must be replaced frequently, resulting in costly downtime and repairs. GaN solid-state microwave systems, on the other hand, are designed to last more than 50,000 to 100,000 hours. Also, unlike magnetrons that require high voltages (4~15 kV), GaN solid-state microwave systems only require a low voltage of 50V, resulting in safer operations and significantly lowering costs.
Lastly, RFHIC’s GaN solid state technology’s most significant advantage is its capability to control the frequency, phase, power, and signal source precisely and digitally. This next-generation technology will host new profound capabilities such as frequency sweeping, band mapping, and pulse width modulation, resulting in optimized end products.
What are the Drivers and Market Opportunities using GaN Solid State Technology?
The possible microwave applications utilizing GaN solid state are endless – from food processing to growing artificial gemstones. The microwave heating market is expected to reach $1.6 billion by 2027. The main drivers are expected to come from food & beverage, plastics, chemicals, and the paper industry.
Food & Beverage
The food & beverage industry has witnessed tremendous growth in the past few years and is expected to reach $7.5 trillion by 2023. One of the major factors driving this growth is the rising preference for processed foods over unprocessed foods due to consumers’ changing lifestyles. However, consumers demand higher quality and more nutritional processed foods made with real ingredients.
With this increase in demand, major food companies are aggressively adopting newer and more profound technologies to benefit the food & beverage industry. Industrial microwave heating can be used for multiple applications within the food and beverage industry, to name a few – microwave drying, pasteurization, sterilization, tempering, cooking, blanching, and much more.
Previously, magnetrons were the only viable power source for food and beverage applications due to their high power and efficiency. With technological advancements, solid-state devices are starting to provide better or equivalent results in reliability, efficiency, power, and costs.
RFHIC’s Low Cost, Efficient, and Powerful (L.E.A.P) GaN solid-state technology will transform food and beverage processing.
Benefits Include
- A significant increase in processing efficiency due to its instantaneous heat-up time, shortening overall processing time.
- Due to their shorter processing time, foods and beverages require fewer additives (ex., Salt, vitamins), reducing costs while creating more nutritional end products.
- Much more uniform heating & cooking, resulting in higher quality end products.
- Microwave heating can extend the shelf life of foods and beverages, decreasing global food waste significantly.
- Lower carbon footprint as microwave equipment consumes less energy vs. conventional methods
Learn More Check out our GaN Solid State Portfolio for Food & Beverage Applications
Ablation Technology
The global ablation technology market is projected to reach USD 4.73B by 2021, with a growing CAGR of 10.9%. The rising incidence of cancer and an ever-increasing prevalence of cardiovascular diseases are major factors driving the ablation technologies market.
The ablation market is categorized into laser/light, radiofrequency, cryoablation, microwave, and hydrothermal ablation technology.
Among them, the microwave ablation segment is expected to grow at the highest rate due to the many advantages it offers
- Faster heating over a larger volume
- Less susceptibility to heat sinks
- Enhanced multiple applicator support and no requirement for ground pads.
- High Reliability
Microwave ablation generators utilize one of two power sources: a magnetron or solid-state amplifier. However, magnetrons require a high-voltage power supply, which often entails a bulky and heavy transformer. RFHIC’s GaN solid state generators, on the other hand, require a low voltage power supply of 50V, reducing size significantly. Our GaN solid state generators are fabricated using our cutting-edge gallium nitride (GaN) on silicon carbide (SiC) transistors, enabling excellent thermal stability, up to 68% efficiency, and power levels capable of up to multi-kWs.
Learn More Check out our GaN Solid State Portfolio for Microwave Ablation
Microwave Plasma
Microwave plasma is one of the application areas of significant economic value in the industry and promises for the future. Plasmas, sources of active ions and free electrons, enable many applications in research projects and commercial sectors. The most widespread application of RF and microwave plasmas is within the semiconductor industry, where plasmas are utilized for:
- Chemical vapor deposition (CVD) of amorphous silicon films used in solar cells
- Deposition of silicon nitride for surface passivation and insulation
- Anisotropic etching in the fabrication of microelectronic chips
- Surface oxidation used in the fabrication of silicon-based microelectronic circuits
Sustain plasmas, and microwave energy has several advantages compared to conventional technology.
- Microwaves have higher ionization efficiency than RF for a given plasma, especially at lower pressures.
- Due to the lack of electrodes, the risk of contamination and damage to sensitive applications is lower.
- Lower ion energies can reduce damage in wafer processing.
- Its higher power capabilities allow for faster growth rates, enabling faster and easier scalability.
Explore more about our High Power Microwave Plasma Sources
Future Outlook and Conclusion
Over the last 75 years, the Magnetron has been the main and only successful source for microwave energy despite its many limitations (frequency stability, short lifetime, and reliability). But now, all that has changed thanks to the advancements of the transistor.
Now, solid state power sources can provide up to multi-kWs of power with efficiencies up to 66% in both mid to high band frequency ranges (900-930 MHz, 2.4-2.5GHz, 5.8GHz).
Gallium nitride (GaN) solid state microwave sources will give us the ability to overcome system design constraints and embark upon a new generation of discovery and innovation, further broadening the scope of microwave power applications.
So goodbye, Magnetron, and hello GaN Solid-State!
Anyang, South Korea, October 6, 2020 – RFHIC Corporation (KOSDAQ:218410), a global leader in designing and manufacturing GaN RF & Microwave solutions, released their latest 100W, 2.4 – 2.5 GHz, CW GaN solid-state generator (RIM25100-20G) designed ideally for non-invasive tumor ablation using microwave energy.
The RIM25100-20G is fabricated using RFHIC’s cutting edge gallium nitride (GaN) on SiC transistors providing a typical efficiency of 60% at 100W CW. Unlike magnetrons that require high voltage power supplies, RFHIC’s solid-state generator requires only a 50V low voltage power supply, simplifying system integration and lowering overall infrastructure costs.
This industry-leading SWaP-C (size, weight, power, and cost) generator is designed with a CPU allowing users to control the systems frequency, power, and signal source (CW or Pulse) for optimal performance. RFHIC’s GaN SiC HEMTs provide excellent thermal stability resulting in reliable prolonged continuous operations.
Microwave energy also offers several advantages for tumor ablation, including faster heating over a larger volume, enhanced multiple applicator support, less susceptibility to heat sinks or local perfusion, and no requirement for ground pads. All system modifications and Custom designs are available upon request.
To learn more, please contact us.
About RFHIC
RFHIC Corporation provides innovative GaN solutions that transform how the world operates, communicates, and protects. Our cutting edge GaN technology is the core foundation of all our inventions for creating a better, faster, and more efficient world. As a global leader in designing and manufacturing GaN RF & Microwave components, we envision spurring a new era of high-powered and reliable devices for the next big change in industrial, cellular, and defense technology. Headquartered in Anyang, South Korea.
RFHIC has a US sales office in Morrisville, North Carolina, and sales distributors throughout North America, Europe, and Asia. RFHIC is an ISO9001 (International quality standard) and ISO14001 (Environmental management standard) certified company, providing reliable and dependable products worldwide.
Media Contacts:
Grace Cho
Grace.cho@rfhic.com
Next Generation Weather Radar with RFHIC’s X Band GaN Solid State Transmitter
Anyang, South Korea, September 29, 2020 – RFHIC Corporation (KOSDAQ:218410), a global leader in designing and manufacturing GaN RF & Microwave solutions, introduced its latest 400W, X band Gallium Nitride (GaN) solid state transmitter (RRT9397400-560) designed for high power radar drivers and polarimetric weather radar system applications.
The RRT9397400-560 delivers 400W of pulsed output power operating at 9,300 to 9,700 MHz, with a duty cycle of 10 percent. This GaN solid-state transmitter is designed to replace outdated and uncontrollable tube-based amplifiers (TWTAs, klystrons, magnetrons) thus providing exceptional thermal stability and reliability. This compact and lightweight transmitter is 19” wide and 2U high and can be installed on the radar mast simplifying system integration and reducing the overall footprint. Due to its scalable architecture, this rack-mountable transmitter is power buildable in case requirements grow.
RFHIC’s GaN solid-state transmitter is designed with a CPU system allowing the user to configure the radar’s pulse width, power, and bandwidth optimizing overall radar performance. The transmitter is also equipped with a detection sensor that monitors the system’s temperature, forward and reverse power to prevent damages to the system. The transmitter is pre-equipped with a low voltage power supply unit (115V) simplifying system integration and lowering overall infrastructure costs. RFHIC’s GaN solid state technology has demonstrated precise and reliable performance for various weather radar customers worldwide.
Custom designs and modifications are welcomed and available upon request.
To learn more, contact us through our website and a sales representative will be more than happy to assist you.
About RFHIC
RFHIC Corporation provides innovative GaN solutions that transform how the world operates, communicates, and protects. Our cutting edge GaN technology is the core foundation of all our inventions for creating a better, faster, and more efficient world. As a global leader in designing and manufacturing GaN RF & Microwave components, we envision spurring a new era of high-powered and reliable devices for the next big change in industrial, cellular, and defense technology. Headquartered in Anyang, South Korea.
RFHIC has a US sales office in Morrisville, North Carolina, and sales distributors throughout North America, Europe, and Asia. RFHIC is an ISO9001 (International quality standard) and ISO14001 (Environmental management standard) certified company, providing reliable and dependable products worldwide.
Media Contacts:
Grace Cho
Grace.cho@rfhic.com
RFHIC Broadening the Gap with Gallium Nitride (GaN)
Anyang, South Korea, September 8, 2020 – RFHIC Corporation (KOSDAQ:218410), a global leader in designing and manufacturing GaN RF & Microwave solutions, released their latest 50W, CW GaN solid-state wideband power amplifier (RWP15040-10) designed ideally for ground to ground, ground to air, satellite communications and direct video broadcasting applications.
This compact wide bandwidth solid-state power amplifier operates from 500 to 2,500 MHz and peak power of 50W. Using its patented technology, the amplifier includes thermal overload and input power overdrive protection. The RWP15040-10 delivers 38dB of power gain at pin 9 dBm and a power gain flatness of ±1.0 dBpp. This highly thermally resistant wideband amplifier provides an input return loss of -5 dB and operates at a supply voltage of 32 V. The quiescent current consumption ranges from 1.2 A (Typ) to 1.7 A (Max). This SWaP-C power amplifier is sized at 98.8 x 75 x 25 and weighs 355 g reducing the system’s overall footprint. The rugged coaxial packages are designed with stainless steel SMA Female connectors. An external heat sink is pre-equipped for cooling. RFHIC’s wideband amplifiers cover L, S, C, and X frequency bands and are designed to withstand tough environmental conditions like humidity, shock, vibration, and altitude.
System modifications and Custom designs are available upon request. To learn more, don’t hesitate to get in touch with us. Contact Us
About RFHIC
RFHIC Corporation provides innovative GaN solutions that transform how the world operates, communicates, and protects. Our cutting edge GaN technology is the core foundation of all our inventions for creating a better, faster, and more efficient world. As a global leader in designing and manufacturing GaN RF & Microwave components, we envision spurring a new era of high-powered and reliable devices for the next big change in industrial, cellular, and defense technology. Headquartered in Anyang, South Korea.
RFHIC has a US sales office in Morrisville, North Carolina, and sales distributors throughout North America, Europe, and Asia. RFHIC is an ISO9001 (International quality standard) and ISO14001 (Environmental management standard) certified company, providing reliable and dependable products worldwide.
Media Contacts:
Grace Cho
Grace.cho@rfhic.com
Anyang, South Korea, September 1, 2020 – RFHIC Corporation (KOSDAQ:218410), a global leader in designing and manufacturing GaN RF & Microwave solutions, released their latest 100W, CW GaN solid-state wideband power amplifier designed for next-generation electronic warfare (EW), radar, military communications, and other applications where space, cooling, and power are limited. This instantaneous wide bandwidth solid state power amplifier operates from 2,000 to 6,000 MHz and provides a gain flatness of 1.5 dB and 22% efficiency. The 100W, CW GaN solid-state power amplifier is fully matched to 50 Ohms, simplifying system design. The amplifier is built using RFHIC’s state of the art GaN on SiC HEMTs providing excellent thermal stability and compact size (175 x 90 x 23 mm).
The RWP2060080-50 is a great replacement for conventional traveling-wave tubes (eg. klystrons, TWTA, magnetrons), providing key features such as ultra-wideband operation, full power across entire bandwidth, low harmonic distortion, low voltage operation, soft failure, and graceful degradation. RFHIC’s wideband amplifiers cover L, S, C, and X frequency bands and are designed to withstand tough environmental conditions like humidity, shock, vibration, and altitude. These rugged coaxial packages are designed with stainless steel SMA Female (RF Input) and N Female (RF Output). For system cooling, an external heat-sink is required.
All system modifications and Custom designs are available upon request. To learn more, please contact us.
About RFHIC
RFHIC Corporation provides innovative GaN solutions that transform how the world operates, communicates, and protects. Our cutting edge GaN technology is the core foundation of all our inventions for creating a better, faster, and more efficient world. As a global leader in designing and manufacturing GaN RF & Microwave components, we envision spurring a new era of high-powered and reliable devices for the next big change in industrial, cellular, and defense technology. Headquartered in Anyang, South Korea.
RFHIC has a US sales office in Morrisville, North Carolina, and sales distributors throughout North America, Europe, and Asia. RFHIC is an ISO9001 (International quality standard) and ISO14001 (Environmental management standard) certified company, providing reliable and dependable products worldwide.
Media Contacts:
Grace Cho
Grace.cho@rfhic.com
RFHIC’s Showcases New Product Offerings at the 2020 Virtual International Microwave Symposium
Anyang, South Korea, August 19th, 2020 – RFHIC Corporation (KOSDAQ:218410), a global leader in designing and manufacturing GaN RF & Microwave solutions, showcased its latest product offerings for 5G, Next Generation Radar, and RF Energy (Industrial, Scientific, and Medical) applications during the 2020 Virtual International Microwave Symposium Conference. It showcased a wide range of GaN solid-state power amplifiers designed ideally for particle accelerators, LINACs, plasma lighting, industrial heating, drying, microwave synthesis, and so much more.
About RFHIC
RFHIC Corporation provides innovative GaN solutions that transform how the world operates, communicates, and protects. Our cutting edge GaN technology is the core foundation of all our inventions for creating a better, faster, and more efficient world. As a global leader in designing and manufacturing GaN RF & Microwave components, we envision spurring a new era of high-powered and reliable devices for the next big change in industrial, cellular, and defense technology. Headquartered in Anyang, South Korea.
RFHIC has a US sales office in Morrisville, North Carolina, and sales distributors throughout North America, Europe, and Asia. RFHIC is an ISO9001 (International quality standard) and ISO14001 (Environmental management standard) certified company, providing reliable and dependable products worldwide.
Media Contacts:
Grace Cho
Grace.cho@rfhic.com
MWJ Executive Interview : RFHIC’s Co-Founder and CTO, Samuel Cho
Microwave Journal had the opportunity to interview our Co-Founder and CTO, Samuel Cho for their latest July 2020 Feature.
What motivated you to start RFHIC in 1999? What was your vision for the company?
RFHIC Corporation, which stands for Radio Frequency Hybrid Integrated Circuit, was founded in 1999 with our cofounder and CEO, David Cho. The motivation all started with an incurable need for cost-effective GaAs components for satellite applications within South Korea. After developing mainly GaAs components, we dove in to developing and manufacturing GaN for telco applications, due to its exceptional performance features.
Our vision for the company is the same as 20 years ago, which is to provide our customers with excellent quality and cost-effective RF and microwave components worldwide.
Discuss the evolution of your products, from the initial focus on the telecom market to high-power amplifiers using GaN technology.
Our initial focus mainly targeted the commercial telecommunications market, especially base stations. After successfully commercializing our GaN on SiC for telco, we expanded towards the defense sector, targeting high-powered radar systems utilizing our high-powered GaN SSPAs. After multiple successful defense and commercial radar projects, we established name value overseas with top global defense contractors, like Raytheon, Lockheed Martin, Northrop Grumman, L3Harris and so much more.
We now have expanded our product portfolio in designing and manufacturing high-powered subsystems for various high-powered industrial, scientific and medical (ISM) applications. With this capability, we can provide our customers with a customizable, one-stop GaN solution — from transistor to system level — lowering costs and getting our customers’ products to market faster.
Describe your technology and manufacturing capabilities for semiconductors, assembly and test. How do these differentiate RFHIC?
RFHIC Corporation is the first and only GaN device to subsystems solution provider in the world, providing our customers with customizable, cost-effective and fast GaN solutions for telco, defense and ISM applications.
Our headquarters facility, located in Anyang, South Korea, is equipped with a grade 4 clean room production facility that is capable of supporting die attach, wire bonding, packaging, chip-on-board, SMT, RF testing, power amplifier assembly, subsystem assembly and ISO-certified quality testing.
I think our biggest differentiator from other suppliers is that we are a fabless company. Being fabless allows us to experiment and utilize different technologies and materials best suited for our customers. It also allows us to allocate our resources more towards R&D, sales and marketing, enabling us to reach a wider audience.
You were an early advocate of GaN. What led you to believe in the technology?
We were able to experiment with various materials like GaAs, LDMOS, GaN on Si and GaN on SiC from the beginning, allowing us to get a clear understanding of what compound semiconductor material was the best fit for us to maintain competitiveness. As technology rapidly progressed, we foresaw at an early stage that conventional materials like GaAs and LDMOS would not be capable of efficiently performing at those higher power and frequency levels.
Being the underdogs within the RF/microwave industry, we tend always to look 10, 20 steps ahead of technology to differentiate ourselves from our competitors. We felt GaN on SiC was the future. GaN is a wide-bandgap semiconductor material that can sustain high breakdown fields and high saturation velocity compared to other conventional semiconductor materials like silicon or GaAs. SiC exhibits exceptional thermal characteristics, allowing the heat to be dissipated in a faster and efficient manner in a much smaller form factor.
In 2017, you purchased the GaN on diamond IP from E6 and announced a GaN on diamond transistor at the 2019 IMS in Boston. Discuss your process for forming the GaN epi on diamond and the maturity of GaN on diamond.
We have reached a stage where GaN is the new “it” compound material and is becoming more widely used among the RF/microwave industry. But I also see within three to four years, GaN on SiC running into physical limitations for higher power applications within the defense and ISM industry, which is what led us to developing the GaN on diamond transistor.
Diamond has five times the thermal conductivity of SiC, allowing GaN devices to operate at much higher power levels while maintaining stable temperatures, significantly improving reliability and performance.
RFHIC’s GaN on diamond epi process starts by taking a GaN epitaxial wafer and attaching a temp carrier on top to protect the GaN surface. Once the temp carrier is attached, the substrate and buffer layer will be removed using various etching processes. Once the substrate is removed completely, diamond seed layers are applied. Utilizing a chemical vapor deposition process, polycrystalline diamond is grown on the backside of the epitaxial wafer. Once the diamond is directly deposited, the backside of the diamond substrate goes through a polishing process to enhance the mechanical properties of the epitaxial wafer. Finally, the temp carrier is removed to create a GaN on diamond epitaxial wafer ready for foundry processing.
We have successfully been able to produce samples for our customers and are currently in the process of fine tuning our technology, which we expect to have within the next couple of years.
How do you compare the performance of your GaN on SiC products with those offered by other suppliers?
Although we purchase our GaN on SiC wafers from a foundry source, we perform all packaging measures in house. Back in 2017, we acquired Metallife, a Korean company that specializes in hermetic packages for RF/microwave applications. Through this acquisition, we were able to significantly lower our material costs while providing our customers with high quality products.
We also spearhead our foundry partners to optimize their solutions for our specific customers’ needs, such as higher power, gain and efficiency in the 5G spectrum and other applications.
Unlike your GaN transistor competitors, you have moved up the food chain to develop kilowatt transmitters for radar and industrial applications. Has this been a successful strategy?
Comparative to our large conglomerate competitors, we are still considered an SME (small- and medium-sized enterprise). To maintain competitiveness, we believe it is in our best interest to expand our product portfolio further towards high-powered subsystems to target next-generation radar and ISM applications.
Gaining early traction in major markets is crucial for radar and ISM equipment makers, since they tend to keep their relations with existing suppliers once they have integrated a new system. I believe by being the first company in the world to provide GaN device to multi-kW subsystems gives us a significant first-mover advantage, allowing us to establish a dominant position within the high-powered RF/microwave industry, as well as the flexibility in creating the standards for this industry.
I also think our customers welcome our efforts providing higher integration solutions, as this adds more value and helps our customers focus more on the bigger picture, getting their end products to market faster for their end customers.
What are the leading markets and geographies you currently serve?
We focus on three key industries: wireless infrastructure for telecommunications, power amplifiers and high-power subsystems for military/commercial radars and ISM applications. Currently, our telecom business captures a substantial portion of our revenue, but we do foresee our defense and RF energy business expanding significantly within the next couple of years.
We have a very global and diverse customer portfolio, spread across North America, Europe and Asia.
What markets and applications are driving growth? Do you plan to address mmWave applications?
5G is the key market and application driving our growth. In addition, many radar applications for military and commercial gained momentum in recent years, where much of our R&D work has translated into mass production.
We see significant increases in growth especially within RF energy, due to the wide transition of tube-based systems over to solid-state technology for various high-powered applications.
We believe the mmWave market is considered a very niche market and will be for some time. I think the action is going to be in that sub-6 GHz range for the initial 5G market. With that said, this does not mean we do not plan to serve mmWave applications. If we start to see a wider adoption on the infrastructure side for mmWave, we are certainly poised to support that in the future.
What has been the most satisfying moment during your time at RFHIC?
Recently, I was able to witness a commercial satellite fly off into space, utilizing RFHIC’s GaN components. This moment truly epitomized the ever-expanding roles of GaN technology and the promising future it holds in creating a more connected and better world.
About RFHIC
RFHIC Corporation provides innovative GaN solutions that transform how the world operates, communicates, and protects. Our cutting edge GaN technology is the core foundation of all our inventions for creating a better, faster, and more efficient world. As a global leader in designing and manufacturing GaN RF & Microwave components, we envision spurring a new era of high-powered and reliable devices for the next big change in industrial, cellular, and defense technology. Headquartered in Anyang, South Korea.
RFHIC has a US sales office in Morrisville, North Carolina, and sales distributors throughout North America, Europe, and Asia. RFHIC is an ISO9001 (International quality standard) and ISO14001 (Environmental management standard) certified company, providing reliable and dependable products worldwide.
Media Contacts:
Grace Cho
Grace.cho@rfhic.com
Anyang, South Korea, June 10, 2020 – RFHIC Corporation (KOSDAQ:218410), a global leader in designing and manufacturing GaN RF & Microwave solutions, featured their latest 4kW and 5kW GaN solid-state pulsed transmitters operable at C-band and X-band frequencies in Microwave Journal’s 2020 Aerospace & Defense Supplement feature. These exceptional transmitters utilize RFHIC’s GaN power devices in a redundant power amplifier (PA) architecture, which provides long lifetimes with “soft” failure. The systems are cooled using forced air.
RFHIC is capable of providing custom design solutions at the modular and system-level providing up to multi-megawatts of power, from DC~40 GHz.
If you have any questions please fill out the form below and our sales representative will be in contact with you shortly.
About RFHIC
RFHIC Corporation provides innovative GaN solutions that transform how the world operates, communicates, and protects. Our cutting edge GaN technology is the core foundation of all our inventions for creating a better, faster, and more efficient world. As a global leader in designing and manufacturing GaN RF & Microwave components, we envision spurring a new era of high-powered and reliable devices for the next big change in industrial, cellular, and defense technology. Headquartered in Anyang, South Korea.
RFHIC has a US sales office in Morrisville, North Carolina, and sales distributors throughout North America, Europe, and Asia. RFHIC is an ISO9001 (International quality standard) and ISO14001 (Environmental management standard) certified company, providing reliable and dependable products worldwide.
Media Contacts:
Grace Cho
Grace.cho@rfhic.com
550W GaN SiC Power Transistor (IE13550D) for Particle Accelerator Applications
Anyang, South Korea, June, 2020 – RFHIC Corporation (KOSDAQ:218410), a global leader in designing and manufacturing GaN RF & Microwave solutions, released its latest 550W, CW GaN SiC power transistor operating at 1.295 GHz to 1.305 GHz (IE13550D). This transistor is designed for CO2 lasers, particle accelerator, plasma, radiation oncology, LINAC, and so much more. The IE13550D achieves an exceptional drain efficiency of 80%, a power gain of 15dB with lower power dissipation. This device is internally matched and has a compact size of 20.6 x 9.8 x 3.77 mm. This compact device provides excellent thermal stability and reliability resulting in longer meantime and exceptional performance.
RFHIC is capable of providing custom design solutions at the modular and system-level providing up to multi-megawatts of power.
About RFHIC
RFHIC Corporation provides innovative GaN solutions that transform how the world operates, communicates, and protects. Our cutting edge GaN technology is the core foundation of all our inventions for creating a better, faster, and more efficient world. As a global leader in designing and manufacturing GaN RF & Microwave components, we envision spurring a new era of high-powered and reliable devices for the next big change in industrial, cellular, and defense technology. Headquartered in Anyang, South Korea.
RFHIC has a US sales office in Morrisville, North Carolina, and sales distributors throughout North America, Europe, and Asia. RFHIC is an ISO9001 (International quality standard) and ISO14001 (Environmental management standard) certified company, providing reliable and dependable products worldwide.
Media Contacts:
Grace Cho
Grace.cho@rfhic.com
RFHIC’s Latest Wide-band Power Amplifier Series
RFHIC’s RWP wideband amplifier series
Anyang, South Korea, May 21, 2020 – RFHIC Corporation (KOSDAQ:218410), a global leader in designing and manufacturing GaN RF & Microwave solutions, released its latest GaN wideband power amplifier series ideally designed for electronic warfare and jamming applications. Providing unmatched dynamic performance and range for next-generation EW applications. RFHIC’s latest RWP-Series is operable at 2 GHz to 6 GHz, fully matched with power levels up to 200W. The solid-state power amplifiers (SSPA) are fabricated with RFHIC’s cutting edge GaN on SiC HEMT providing industry-leading size, weight, and cost (SWaP-C).
RFHIC is capable of providing custom design solutions at the modular and system-level providing up to multi-kW of power.
About RFHIC
RFHIC Corporation provides innovative GaN solutions that transform how the world operates, communicates, and protects. Our cutting edge GaN technology is the core foundation of all our inventions for creating a better, faster, and more efficient world. As a global leader in designing and manufacturing GaN RF & Microwave components, we envision spurring a new era of high-powered and reliable devices for the next big change in industrial, cellular, and defense technology. Headquartered in Anyang, South Korea.
RFHIC has a US sales office in Morrisville, North Carolina, and sales distributors throughout North America, Europe, and Asia. RFHIC is an ISO9001 (International quality standard) and ISO14001 (Environmental management standard) certified company, providing reliable and dependable products worldwide.
Media Contacts:
Grace Cho
Grace.cho@rfhic.com