Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
RFHIC’s RRP2735160-35 is an S-band, 180W, gallium-nitride (GaN) Power Amplifier designed for radar systems applications. Operating from 2700 to 3500 MHz, the RRP2735160-35 achieves 35dB of gain with an efficiency of 40%. The RRP2735160-35 is designed using RFHIC’s gallium-nitride on silicon carbide (GaN-on-SiC) high-electron-mobility (HEMT) technology in higher breakdown voltage, wider bandwidth, and higher efficiency. The RRP2735160-35 achieves a duty of 20% and a pulse width of 2000 us. Both RF ports have integrated DC-blocking capacitors and are fully matched to 50 Ohms.
View Product Specification| Band | S-band |
|---|---|
| Min Freq.(MHz) | 2700MHz |
| Max Freq.(MHz) | 3500MHz |
| Type | Pallet |
| Typ Output Power(W) | 180W |
| Power Gain(dB) | 35dB |
| PAE(%) | 40% |
| VDC(V) | 50 |