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H001C11A

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Description

RFHIC’s H001C11A is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility transistor (HEMT) which operates from 1880 to 2025 MHz.The H001C11A delivers 195 W of saturated power at 48V and is designed to provide higher efficiency and linearity. The device is ideally suited for WiMAX, LTE, WCDMA and GSM systems.

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WiMAX, LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency Doherty Amplifier

Specification

Min Freq.(MHz) 1880MHz
Max Freq.(MHz) 2025MHz
Typ Output Power(W) 32W
Saturation Power(W) 195W
Power Gain(dB) 16.9dB
Efficiency 48%
VDC(V) 48
Package RF12001DKR3-PK2
Package Type Flange