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H002C12A

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Description

RFHIC’s H002C12A is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility transistor (HEMT) which operates from 2496 to 2690 MHz.The H002C11A delivers 195 W of saturated power at 48V and is designed to provide higher efficiency and linearity. The device is ideally suited for WiMAX, LTE, WCDMA and GSM systems.

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WiMAX, LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency Doherty Amplifier

Specification

Min Freq.(MHz) 2496MHz
Max Freq.(MHz) 2690MHz
Typ Output Power(W) 32W
Saturation Power(W) 195W
Power Gain(dB) 14.4dB
Efficiency 53%
VDC(V) 48
Package RF12001DHKR3-PK2
Package Type Flange