Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
H029C11A
Description
RFHIC’s H029C11A is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility transistor (HEMT) which operates from 2620 to 2690 MHz.The H029C11A delivers 310 W of saturated power at 48V and is designed to provide higher efficiency and linearity. The device is ideally suited for WiMAX, LTE, WCDMA and GSM systems.
View Product Specification
WiMAX, LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency Doherty Amplifier
Specification
| Min Freq.(MHz) | 2620MHz |
|---|---|
| Max Freq.(MHz) | 2690MHz |
| Typ Output Power(W) | 54W |
| Saturation Power(W) | 310W |
| Power Gain(dB) | 14.1dB |
| Efficiency | 50% |
| VDC(V) | 48 |
| Package | RF18010DKR3 |
| Package Type | Flange |