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H028P1

Transistors - Wireless Infrastructure
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Description

RFHIC’s H028P1 is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility transistor (HEMT) which operates from 2620 to 2690 MHz.The H028P1 delivers 33.1 W of saturated power at 48V and is designed to provide higher efficiency and linearity. The device is ideally suited for WiMAX, LTE, WCDMA and GSM systems.

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WiMAX, LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency Doherty Amplifier

Specification

Min Freq.(MHz) 2620MHz
Max Freq.(MHz) 2690MHz
Typ Output Power(W) 3.2W
Saturation Power(W) 33.1W
Power Gain(dB) 18.6dB
Efficiency 23%
VDC(V) 48
Package DFN66726L-Q2
Package Type Surface Mount