Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
ID20411D
Description
RFHIC’s ID20411D is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 1930 to 2200 MHz and provides a saturated power of 410 W . The ID20411D is designed to provide higher efficiency and linearity. The device is internally matched and is ideally suited for 4G LTE and 5G NR systems.
View Product Specification
4G LTE, 5G NR system
Multi-Band, Multi-Mode
High Efficiency Doherty Amplifier
Specification
| Min Freq.(MHz) | 1930MHz |
|---|---|
| Max Freq.(MHz) | 2200MHz |
| Typ Output Power(W) | 56.2W |
| Saturation Power(W) | 410W |
| Power Gain(dB) | 16dB |
| Efficiency | 48.1% |
| VDC(V) | 48 |
| Package | RF24008DKR3 |
| Package Type | Flange |
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