Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
ID19411D
Description
RFHIC’s ID19411D is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 1995 to 2020 MHz.The ID19411D delivers 410 W of saturated power at 48V and is designed to provide higher efficiency and linearity. The device is internally matched and is ideally suited for 4G LTE, and 5G NR systems.
View Product Specification
WiMAX, LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency, Doherty Amplifier
Specification
| Min Freq.(MHz) | 1995MHz |
|---|---|
| Max Freq.(MHz) | 2020MHz |
| Typ Output Power(W) | 55W |
| Saturation Power(W) | 410W |
| Power Gain(dB) | 16.7dB |
| VDC(V) | 48 |
| Package | RF24008DKR3 |
| Package Type | Flange |
| Drain Efficiency(%) | 49% |
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