Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
ID38411DR
Description
RFHIC’s ID38411DR is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 3700 to 4000 MHz.The ID38411DR delivers 400W of saturated power at 48V and is designed to provide higher efficiency and linearity. The device is internally matched and is ideally suited for 4G LTE and 5G NR systems.
View Product Specification
WiMAX, LTE, WCDMA, GSM, 5GNR
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency, Doherty Amplifier
Specification
| Min Freq.(MHz) | 3700MHz |
|---|---|
| Max Freq.(MHz) | 4000MHz |
| Typ Output Power(W) | 56.2W |
| Saturation Power(W) | 400W |
| Power Gain(dB) | 14.4dB |
| VDC(V) | 48 |
| Package | RF24008DKR3 |
| Package Type | Flange |
| Drain Efficiency(%) | 46% |
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