Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
ID36461D
Description
RFHIC’s ID36461D is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates up to 3600 MHz.The ID36461D delivers 460 W of saturated power at 48V. It can be used in Doherty architecture for the final stage of a base station power amplifier for WiMAX, 5G NR, and GSM systems.
View Product Specification
WiMAX, 5G NR, WCDMA
GSM, Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency, Doherty Amplifier
Specification
| Min Freq.(MHz) | 3400MHz |
|---|---|
| Max Freq.(MHz) | 3600MHz |
| Typ Output Power(W) | 56.2W |
| Saturation Power(W) | 460W |
| Power Gain(dB) | 14.4dB |
| VDC(V) | 48 |
| Package | RF24008DKR3 |
| Package Type | Flange |
| Drain Efficiency(%) | 47% |
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