Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
H031
Description
RFHIC’s H031 is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility transistor (HEMT) which operates from 3400 to 3800 MHz.The H031 delivers 56.2 W of saturated power at 48V and is designed to provide higher efficiency and linearity. The device is ideally suited for WiMAX, LTE, WCDMA and GSM systems.
View Product Specification
WiMAX, LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency Doherty Amplifier
Specification
| Min Freq.(MHz) | 3400MHz |
|---|---|
| Max Freq.(MHz) | 3800MHz |
| Typ Output Power(W) | 10W |
| Saturation Power(W) | 56.2W |
| Power Gain(dB) | 14.2dB |
| Efficiency | 46% |
| VDC(V) | 48 |
| Package | DFN7010010L |
| Package Type | Surface Mount |