Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
ID19601D
Description
RFHIC’s ID19601D is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 1930 to 1995 MHz.The ID19601D delivers 600 W of saturated power at 48V and is designed to provide higher efficiency and linearity. The device is internally matched and is ideally suited for 4G LTE, and 5G NR systems.
View Product Specification
4G LTE, 5G NR system
Multi-Band, Multi-Mode
Doherty Amplifier
Specification
| Min Freq.(MHz) | 1930MHz |
|---|---|
| Max Freq.(MHz) | 1995MHz |
| Typ Output Power(W) | 81.3W |
| Saturation Power(W) | 600W |
| Power Gain(dB) | 16.2dB |
| Efficiency | 48.2% |
| VDC(V) | 48 |
| Package | RF24009DKR3 |
| Package Type | Flange |
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