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H027C11A

Transistors - Wireless Infrastructure
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Description

RFHIC’s H027C11A is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility transistor (HEMT) which operates from 758 to 960 MHz.The H027C11A delivers 630 W of saturated power at 48V and is designed to provide higher efficiency and linearity. The device is ideally suited for WiMAX, LTE, WCDMA and GSM systems.

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WiMAX, LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency Doherty Amplifier

Specification

Min Freq.(MHz) 758MHz
Max Freq.(MHz) 960MHz
Typ Output Power(W) 107W
Saturation Power(W) 630W
Power Gain(dB) 17dB
Efficiency 57%
VDC(V) 48
Package RF24010DKR3
Package Type Flange