Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
RWP05120-51
Description
The RWP05120-51 is a gallium-nitride-on silicon carbide (GaN-on-SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 1000 MHz, the RWP05120-51 is designed using RFHIC’s GaN-on-SiC high-electron-mobility transistors (HEMT), providing high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration.
View Product Specification
Radar
Military Communications
Specification
| Min Freq.(MHz) | 20MHz |
|---|---|
| Max Freq.(MHz) | 1000MHz |
| Type | Pallet |
| Typ Output Power(W) | 120W |
| Power Gain(dB) | 51dB |
| PAE(%) | 55% |
| VDC(V) | 28 |