Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
The RRM9397800-59A is an 800W, pulsed GaN solid-state power amplifier operable at X-band. The RRM9397800-59A is fabricated with RFHIC’s state-of-the-art gallium nitride (GaN) technology providing excellent efficiency and high breakdown voltage. The RRM9397800-59A provides a power gain of 59dB with a power-added efficiency of 20%. The RRM9397800-59A are cost-effective replacements for traveling wave tube (TWT) amplifiers and offer longer life, better efficiencies, and reduced size and weight than their TWT counterparts.RFHIC’s GaN-based pulsed power amplifiers can be used in numerous military and high-end commercial applications, including radar, communication transmitters, and jamming systems.
View Product Specification| Band | X-Band |
|---|---|
| Min Freq.(MHz) | 9300MHz |
| Max Freq.(MHz) | 9700MHz |
| Type | Module |
| Typ Output Power(W) | 800W |
| Power Gain(dB) | 59dB |
| PAE(%) | 20% |