Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
RFM245-10
Description
RFHIC’s RFM245-10 is a 100W, gallium-nitride solid-state power amplifier (GaN SSPA) and generator ideally designed for medical equipment applications. It has a drain efficiency of 37% and is capable of continuous wave and pulsed operations. This device is equipped with a signal attenuator and is fully matched to 50 ohms.
View Product Specification
Microwave Heating
Microwave Drying
Plasma Generation
Specification
| Min Freq.(MHz) | 2400MHz |
|---|---|
| Max Freq.(MHz) | 2500MHz |
| Output Power(W) | 100W |
| Efficiency | 37% |
| VDC(V) | 50 |
| Operating Mode | CW/Pulsed |
| Cooling | Air |
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