Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
RIM092K0-20
Description
RFHIC’s RIM092K0-20 is a 2kW, gallium nitride solid-state power amplifier (GaN SSPA) operable from 900 to 930MHz. The amplifier is designed ideally for high-power industrial, medical, and scientific microwave heating and plasma generation applications. The RIM092K0-20 high-efficiency rugged device is targeted to replace industrial magnetrons and other vacuum tubes.
View Product Specification
Microwave Heating
Microwave Drying
Plasma Generation
Specification
| Min Freq.(MHz) | 900MHz |
|---|---|
| Max Freq.(MHz) | 930MHz |
| Output Power(W) | 2000W |
| Efficiency | 66% |
| VDC(V) | 50 |
| Operating Mode | CW/Pulse |
| RF Input Connector | SMA, Female |
| RF Output Connector | 7/16 DIN, Female |
| Cooling | Water |
RFM245-10
RIM09800-20 ›
RFHIC’s RIM09800-20 is an 800W, gallium-nitride solid-state power amplifier (GaN SSPA) designed ideally as the building block for high-power microwave ...
RIM132K0-20 ›
RFHIC’s RIM132K0-20 is a 2kW gallium-nitride solid-state power amplifier (GaN SSPA) designed for industrial, scientific, and medical applications oper...
RIM091K1-20 ›
RFHIC’s RIM091K1-20 is a 1.1kW, gallium nitride solid-state power amplifier (GaN SSPA) operable from 900-930 MHz. It has a drain efficiency of 63% and ...
RIM092K0-20 ›
RFHIC’s RIM092K0-20 is a 2kW, gallium nitride solid-state power amplifier (GaN SSPA) operable from 900 to 930MHz. The amplifier is designed ideally for...