Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
HM0220-03A
Description
RFHIC’s HM0220-03A is a gallium-nitride (GaN) hybrid power amplifier ideally suited for radio systems and medical device applications. Covering from 200 to 2000 MHz, the HM0220-03A yields a high gain of 34 dB with 39% efficiency at P3dB. The HM0220-03A is designed using RFHIC’s gallium-nitride on silicon carbide (GaN-on-SiC) high-electron-mobility (HEMT). It is packaged in a hybrid surface mount (SMD) using a metal-lid and aluminum nitride (AIN) board to provide excellent thermal dissipation. The device is connected via bias and is fully matched to 50-Ohms with DC blocking capacitors on both RF ports for simple system integration.
View Product Specification
Communication Systems
Medical Device
Military Jammer
Specification
| Min Freq.(MHz) | 200MHz |
|---|---|
| Max Freq.(MHz) | 2000MHz |
| Saturation Power(W) | 3W |
| Power Gain(dB) | 34dB |
| Efficiency | 39% |
| VDC(V) | 18 |
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