Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
RFHIC’s RRM1213-15R1A-21P is an LNA fabricated on RFHIC’s GaAs p-high-electron-mobility (HEMT) process. Covering 1200 to 1300 MHz, the RRM1213-15R1A-21P provides 15dB of gain and P1dB of 21dBm, while supporting a noise figure of 3.5dB. Operating voltages from 14.5V to 15.5V.
The RRM1213-15R1A-21P’s high performance and handling ease make it ideal for L-band radars and communication systems.
| Min Freq.(MHz) | 1200MHz |
|---|---|
| Max Freq.(MHz) | 1300MHz |
| Typ Output P1dB(dB) | 21dBm |
| Noise Figure(dB) | 3.5dB |
| Power Gain(dB) | 15dB |
| VDC(V) | 15.5 |