Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
WL0510
Description
RFHIC’s WL0510 is a GaAs hybrid low noise amplifier designed using RFHIC’s E-p high-electron-mobility (HEMT) process. Operating from 1 to 520 MHz, the WL0510 yields a high gain of 23 with 33 dBm OIP3 levels. The WL0510 is packaged in a hybrid surface mount (SMD); no matching circuit is required. The device is ideally suited for MILCOM and defense jammer applications.
View Product Specification
CATV
Radio Systems
Satellite
Specification
| Min Freq.(MHz) | 1MHz |
|---|---|
| Max Freq.(MHz) | 520MHz |
| Typ Output P1dB(dB) | 21dBm |
| Noise Figure(dB) | 1.7dB |
| Power Gain(dB) | 23dB |
| VDC(V) | 5 |
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