Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
The RCM502K5-20 is a 2.5kW, GaN solid-state power amplifier designed for high power industrial, scientific, and medical (ISM) applications. The solid-state power amplifier is operable at 500MHz with +/-1MHz bandwidth. The amplifier is equipped with RFHIC’s cutting edge gallium- nitride (GaN) on SiC HEMT providing excellent efficiency and breakdown voltage. The GaN Solid state Power Amplifier (SSPA) is suitable for use in CW applications. This high efficiency rugged device is targeted to replace industrial magnetrons and other vacuum tubes currently powering industrial heating, drying, microwave CVD, semiconductor equipment and linear accelerator applications.
View Product Specification| Min Freq.(MHz) | 499MHz |
|---|---|
| Max Freq.(MHz) | 501MHz |
| Output Power(W) | 2500W |
| Power Gain(dB) | 70.5dB |
| Efficiency | 60% |
| VDC(V) | 50 |
| RF Input Connector | SMA, Female |
| RF Output Connector | 7/16DIN Female |
| Cooling | Water |