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RCM251K6-20

HPA - RF Energy
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Description

The RCM251K6-20 is a 1.6 kW, GaN Solid-State Power Amplifier designed for high power industrial, scientific, and medical (ISM) applications. The solid-tate power amplifier is operable from 2400 to 2500 MHz and is built using RFHIC’s cutting edge gallium- nitride (GaN) on SiC HEMT providing excellent efficiency and breakdown voltage.

The GaN Solid state Power Amplifier (SSPA) is suitable for use in CW, pulse, and linear applications. This high efficiency rugged device is targeted to replace industrial magnetrons and other vacuum tubes currently powering industrial heating, drying, microwave CVD, semiconductor equipment and sintering.

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Datasheet
Microwave Heating and Drying
RF & Microwave Cooking
Semiconductor Equipment
Carbon Fiber Manufacturing

Specification

Min Freq.(MHz) 2400MHz
Max Freq.(MHz) 2500MHz
Output Power(W) 1600W
Power Gain(dB) 62dB
DC RF Efficiency(%) 57%
VDC(V) 50
RF Input Connector SMA Female
RF Output Connector 7/16 DIN Female
Cooling Water
Dimension(mm) 200 x 361.5 x 53
Weight 7.6kg