Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
RFHIC’s RIM502K5-20 is a GaN solid-state power amplifier designed for applications in semiconductor equipment, microwave sintering, and microwave heating and plasma generation. Operating at 500MHz with a ±1MHz bandwidth, this amplifier utilizes RFHIC’s advanced gallium nitride (GaN) on silicon carbide (SiC) HEMT technology, offering exceptional efficiency and high breakdown voltage.
View Product Specification| Min Freq.(MHz) | 499MHz |
|---|---|
| Max Freq.(MHz) | 501MHz |
| Output Power(W) | 2700W |
| Power Gain(dB) | 60dB |
| Efficiency | 60% |
| VDC(V) | 50 |
| RF Input Connector | SMA, Female |
| RF Output Connector | 7/16DIN Female |
| Cooling | Water |