Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
RFHIC’s RWP2060080-50 is a 100W, gallium-nitride (GaN) Wideband Power amplifier designed for various electronic warfare applications. This gallium-nitride (GaN) wideband amplifier operates from 2000 to 6000 MHz and offers high reliability and ruggedness. The RWP2060080-50 is fabricated using RFHIC’s state-of-the-art gallium-nitride on silicon carbide (GaN-on-SiC) transistors, providing the industry’s best size, weight, and power (SWaP).
View Product Specification| Min Freq.(MHz) | 2000MHz |
|---|---|
| Max Freq.(MHz) | 6000MHz |
| Type | Pallet |
| Typ Output Power(W) | 100W |
| Power Gain(dB) | 50dB |
| PAE(%) | 22% |
| VDC(V) | 35 |